This circuit may be used where a high current is required with a low ripple voltage (such as in a high powered class AB amplifier when high quality reproduction is necessary ).
PARTS LIST | |
| R1 | 2.2KΩ 1W |
| R2 | 56Ω 1W |
| R3 | 1oKΩ 1W |
| C1 | 1000µF 63V |
| C2 | 100µF 50V |
| C3 | 470µF 50V |
| D1, D2, D3, D4 | 6A Bridge Rectifier |
| D5 | 500mA Zener Diode (see description) |
| Q1 | 2N3055 |
| Q2 | 2N3054 |
Q1, Q2, and R2 may be regarded as a power darlington transistor. D5 and R1 provide a reference voltage at the base of Q1. D5 should be chosen thus:
D5=Vout-1.2
D5=Vout-1.2
C2 can be chosen for the degree of smoothness as its value is effectively multiplied by the combined gains of Q1/Q2, if 100µF is chosen for C2, assuming minimum hef for Q1 and Q2,
C=100×15(Q1)×25(Q2)
=37000µF.